Product Summary
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, anddesigned for high voltage applications such as switching power supply, AC adapter.
Parametrics
2SK3115 absolute maximum ratings: (1) Drain to Source Voltage (VGS=0 V), VDSS: 600V; (2) Gate to Source Voltage (VDS=0V) , VGSS : ±30V; (3) Drain Current (DC) (Tc=25°C), ID (DC): ±6.0A; (4) Drain Current (pulse) , ID (pulse) : ±24A; (5) Total Power Dissipation (TA=25°C) , PT1: 2.0W; (6) Total Power Dissipation (Tc=25°C) ,PT2 : 35W; (7) Channel Temperature Tch: 150°C; (8) Storage Temperature Tstg: -55 to +150°C; (9) Single Avalanche Current, IAS: 6.0A; (10) Single Avalanche Energy EAS: 24mj.
Features
2SK3115 features: (1) Low gate charge QG=26 nC TYP. (VDD=450V, VGS=10V, ID=6.0A) ; (2) Gate voltage rating: ±30V; (3) Low on-state resistance, RDS (on) = 1.2ΩMAX. (VGS=10V, ID=3.0A); (4) Avalanche capability ratings.
Diagrams
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2SK3115_1377661 |
Other |
Data Sheet |
Negotiable |
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2SK3001 |
Other |
Data Sheet |
Negotiable |
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2SK3009 |
Other |
Data Sheet |
Negotiable |
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2SK3012 |
Other |
Data Sheet |
Negotiable |
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2SK3013 |
Other |
Data Sheet |
Negotiable |
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2SK3017 |
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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