Product Summary

The AOP605 is a complementary enhancement mode field effect transistor. The AOP605 uses advanced trench technology to provide excellent RDS (ON) and low gate charge. The complementary MOSFETs of the AOP605 form a high-speed power inverter, suitable for a multitude ofapplications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications) . The AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.

Parametrics

AOP605 absolute maximum ratings: (1) Drain-Source Voltage VDS: 30V, -30V; (2) Gate-Source Voltage: ±20V; (3) Continuous Drain Current (TA=25°C): 7.5A, -6.6A , (TA=70°C) : 6A, -5.3A; (4) Pulsed Drain Current : 30V, -30V; (5) Power Dissipation (TA=25°C) : 2.5w, TA=70°C : 1.6W; (6) unction and Storage Temperature Range: -55°C to 150°C.

Features

AOP605 features: (1) VDS (V) =30V, -30V; (2) ID=7.5A (VGS=10V) , -6.6A (VGS= -10V) ; (3) RDS (ON) ＜28mΩ (VGS=10V) , ＜35mΩ (VGS=-10V) ; (4) ＜43mΩ (VGS=4.5V), ＜58mΩ (VGS=-4.5V) .

Diagrams

AOP605 Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOP605L
AOP605L
Other

Data Sheet
Negotiable 
AOP605
AOP605

MOSFET N/P-CH COMPL 30V 8-PDIP
Data Sheet
Negotiable