(China (Mainland))
Product Summary
The BD139 is a NPN power transistor. And the BD139 is in a TO-126, SOT32 plasticpackage. The is designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuit. And the BD139 has the following features: DC Current Gain-hFE =40 (Min) @ Ic =0.15 Adc, BD 135, 137, 139 are complementary with BD 136, 138, 140.
Parametrics
BD139 absolute maximum ratings: (1) Collector-Emitte Voltage VCEO: 80Vdc; (2) Collector-Base Voltage VCBO: 100Vdc; (3) Emitter-Base Voltage VEBO: 5Vdc; (4) Collector Current Ic: 1.5Adc; (5) Base Current Ib: 0.5Adc; (6) Total Device Dissipation @TA=25°C PD: 1.25Watt, Derate above 25°C: 10m°C/W; (7) Total Device Dissipation @TC=25°C PD: 12.5Watt, Derate above 25°C: 100m°C/W; (8) Operating and Storage Junction TJ: -55 to +150°C, Temperature Range Tstg: -55 to +150°C.
Features
BD139 features: (1) DC Current Gain-hFE =40 (Min) @ Ic =0.15 Adc; (2) BD 135, 137, 139 are complementary with BD 136, 138, 140.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BD139 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Audio Amplifier |
Data Sheet |
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BD139-10 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Silicon Trnsistr |
Data Sheet |
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BD13910S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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BD139-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Silicon Trnsistr |
Data Sheet |
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BD13916S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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BD13916STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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BD1396S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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BD1396STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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