(China (Mainland))
Product Summary
The IRG4BC40UPBF is an insulated gate bipolar transistor. The IRG4BC40UPBF offers highest efficency available. The IRG4BC40UPBF is optimized for specified application conditions.
Parametrics
IRG4BC40UPBF absolute maximum ratings: (1) Collector -to-Emitter Voltage VCES: 600V; (2) Continuous Collector Current: 40A ( Ic@Tc=25°C) ; (3) Continuous Collector Current: 20A (Ic@Tc=100°C) ; (4) Pulsed Collector Current ICM : 16oA; (5) Clamped Inductive Load Current ILM: 160A; (6) Gate-to-Emitter Voltage: ±20V; (7) Maximum Power Dissipation: 65W (PD@TC=100°C); (8) Operation Junction and Storage Temperature Range: -55 to +150°C; (9) Soldering Temperature, for 10sec. : 300°C (0.063 in (1.6mm) from case.
Features
IRG4BC40UPBF features: (1) UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode; (2) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3) Industry standard TO-220AB package; (4) Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRG4BC40UPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
IRG4BAC50S |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50U |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W-S |
|
DIODE IGBT 600V SUPER 220 |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W-SPBF |
|
IGBT N-CHAN 600V 55A SUPER220 |
Data Sheet |
|
|
||||||||||||
 |
IRG4BC10K |
|
IGBT UFAST 600V 9.0A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
