Product Summary

The ME2206M6G is designed for applications through 40GHz in Ka-band. The ME2206M6G schottky barrier mixer diode is made by depositiob of a suitable barrier metal on an epitaxial silicon substrate from the junction. The ME2206M6G diode is available in a wide range and series resistances are comparable with the packaged ME2206M6G that is available through K-band.

Parametrics

ME2206M6G absolute maximum ratings: (1) Storage Temperature: -65°C/+175°C; (2) Opertating Temperature: -65°C/+175°C; (3) Dissipated Power: 75mW/Junction; (4) Max Current: 100mA.

Features

ME2206M6G features: (1) Ideal for MIC; (2) Low 1/f Noise; (3) Low Intermodulation Distortion; (4) Low Turn On; (5) Hermetically Sealed Packages; (6) SPC Controlled Water Fabrication.

Diagrams

ME2206M6G  Circuit