(China (Mainland))
Product Summary
The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MHL21336 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MHL21336 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MHL2ACLTE15NJ |
KOA Speer |
Power Inductors 15nH 5% |
Data Sheet |
Negotiable |
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MHL2ACLTE2N7S |
KOA Speer |
Power Inductors 2.7nH +/-0.3nH |
Data Sheet |
Negotiable |
|
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|
MHL2ACTTE1N5S |
KOA Speer |
Power Inductors 1.5nH +/-0.3nH |
Data Sheet |
Negotiable |
|
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MHL2ACTTE10NJ |
KOA Speer |
Power Inductors 10nH 5% |
Data Sheet |
Negotiable |
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|
MHL2ACTTE15NJ |
KOA Speer |
Power Inductors 15nH 5% |
Data Sheet |
Negotiable |
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